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Applied Sciences
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Advanced Semiconductor Lasers
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Advanced Semiconductor Lasers

A special issue of Applied Sciences (ISSN 2076-3417). This special issue belongs to the section "Optics and Lasers".

Deadline for manuscript submissions: closed (30 November 2022) | Viewed by 5642

Special Issue Editor

Dr. Cunzhu Tong

E-Mail Website
Guest Editor
Changchun Institute of Optics Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
Interests: high-brightness diode lasers; surface-emitting lasers; semiconductor disk lasers

Special Issue Information

Dear Colleagues,

Semiconductor lasers are an important information light source and energy light source because of their small size, light weight, and high efficiency. The new generation of semiconductor laser technology is developing toward higher power, stronger brightness, higher speed, and lower power consumption, which effectively support and promote the development of Internet, 5G, big data, cloud computing, supercomputer, quantum technology, driverless, advanced manufacturing, and other industries. This Special Issue will focus on the advanced progress of mechanisms, materials, processes, and applications of semiconductor lasers.

Potential topics include but are not limited to the following:

  • High power broad-area semiconductor lasers and beam combining technology;
  • Vertical-cavity surface-emitting lasers (VCSELs);
  • Photonic crystal lasers;
  • High-speed DFB lasers;
  • High-power and narrow-linewidth DFB for silicon photonics;
  • Quantum dot lasers.

Dr. Cunzhu Tong
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Applied Sciences is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • broad-area semiconductor lasers
  • vertical-cavity surface-emitting lasers
  • DFB
  • PCSEL
  • quantum wells
  • quantum dots

Published Papers (4 papers)

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Research

8 pages, 2415 KiB  
Communication
High Brightness Diode Laser Based on V-Shaped External Cavity and Beam-Waist Splitting Polarization Combining
by Yufei Zhao, Cunzhu Tong, Zhipeng Wei, Jian Feng and Lijie Wang
Appl. Sci. 2023, 13(4), 2125; https://doi.org/10.3390/app13042125 - 07 Feb 2023
Cited by 1 | Viewed by 1063
Abstract
A beam combining method to improve the brightness of diode lasers is proposed based on a V-shaped external cavity spectral beam and beam-waist splitting polarization combination. This design has the outstanding advantages of improving the beam quality, brightness, and versatility of the diode [...] Read more.
A beam combining method to improve the brightness of diode lasers is proposed based on a V-shaped external cavity spectral beam and beam-waist splitting polarization combination. This design has the outstanding advantages of improving the beam quality, brightness, and versatility of the diode laser. Specifically, an output power over 16W with M2 factors of 1.79 × 3.92 (Beam Parameter Product BPP = 0.55 × 1.22 mm mrad) at 40 A in the fast and slow axis is demonstrated for a commercial standard cm-bar. Furthermore, the slow axis M2 of the combined laser is improved by 56% compared with that of a single emitter. Additionally, the brightness of 262 MW·cm−2·sr−1, 136% higher than that of spectral beam combining without using beam-waist splitting polarization, was realized. Full article
(This article belongs to the Special Issue Advanced Semiconductor Lasers)
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10 pages, 2492 KiB  
Article
Symmetry Criterion and Far-Field Control of Photonic-Crystal Surface-Emitting Lasers
by Ziye Wang, Pinyao Wang, Huanyu Lu, Bo Meng, Yanjing Wang, Cunzhu Tong and Lijun Wang
Appl. Sci. 2022, 12(20), 10581; https://doi.org/10.3390/app122010581 - 20 Oct 2022
Cited by 3 | Viewed by 1357
Abstract
Photonic-crystal surface-emitting lasers (PCSELs) have led to amazing results in overcoming the divergence limitation of semiconductor lasers. However, so far, the physical mechanism behind this promising control of far-field characteristics is still unclear. Here, we perform a theoretical study of the mechanism of [...] Read more.
Photonic-crystal surface-emitting lasers (PCSELs) have led to amazing results in overcoming the divergence limitation of semiconductor lasers. However, so far, the physical mechanism behind this promising control of far-field characteristics is still unclear. Here, we perform a theoretical study of the mechanism of the influence of photonic crystal (PhC) geometry on the far field of PCSELs. The perspective from group theory is adopted in our analysis. We explore the function of symmetry in the formation of the far-field pattern (FFP) and clarify the roles played by various PhC parameters in this process. Through our analysis, a symmetry criterion to design PCSELs with single-lobed narrow beams is shown, where an asymmetric in-plane PhC structure, a large vertical confinement factor, and a sufficient number of periods are required. Our results reveal the physical origin of the narrow beam of PCSELs, which can even reach 0.1° with a PhC cavity size of over 1000 μm at a lasing wavelength of 940 nm. Full article
(This article belongs to the Special Issue Advanced Semiconductor Lasers)
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8 pages, 1438 KiB  
Communication
High Brightness Diode Lasers Based on Beam Splitting and Polarization Combining
by Yufei Zhao, Cunzhu Tong, Lijie Wang, Yanjing Wang, Huanyu Lu, Xin Zhang, Zhipeng Wei and Lijun Wang
Appl. Sci. 2022, 12(16), 7980; https://doi.org/10.3390/app12167980 - 09 Aug 2022
Cited by 2 | Viewed by 1473
Abstract
A new method to improve the brightness of diode lasers based on beam-waist splitting and polarization combining was proposed and demonstrated. The beam waist was split by a precisely cut prism into two parts and combined with a polarization beam combiner. The advantages [...] Read more.
A new method to improve the brightness of diode lasers based on beam-waist splitting and polarization combining was proposed and demonstrated. The beam waist was split by a precisely cut prism into two parts and combined with a polarization beam combiner. The advantages of simple setup, high efficiency, brightness, and universality were presented. The slow axis M2 factor of a broad-area diode laser with a ridge beam width of 180 μm was reduced from 18.5 to 9.8, and a brightness of 42.4 MW cm−2 sr−1 was realized; this brightness was a 84.21% improvement of the same emitter at 8 A. The slow axis M2 factor of a commercial broad-area diode laser array combined by spectral beam combining was reduced from 9.08 to 4.78, and 80.6% improvement of brightness was realized on the same commercial broad-area diode laser array. A brightness of 195.8 MW cm−2 sr−1 was realized at 36 A by this diode laser array. This method can be applied in a highly polarized light source to improve the beam quality and brightness. Full article
(This article belongs to the Special Issue Advanced Semiconductor Lasers)
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9 pages, 6888 KiB  
Article
Parasitic Parameters Extraction of High-Speed Vertical-Cavity Surface-Emitting Lasers
by Haixia Tong, Yanjing Wang, Sicong Tian, Cunzhu Tong, Zhipeng Wei and Lijun Wang
Appl. Sci. 2022, 12(12), 6035; https://doi.org/10.3390/app12126035 - 14 Jun 2022
Viewed by 1297
Abstract
Parasitic parameters, including electrical capacity and inductance, are the key limiting factors for bandwidth improvement of high-speed vertical-cavity surface-emitting lasers (VCSELs). The traditional parasitic extraction method, which uses a first-order low-pass filter transfer function, is oversimplified, and there are large deviations between the [...] Read more.
Parasitic parameters, including electrical capacity and inductance, are the key limiting factors for bandwidth improvement of high-speed vertical-cavity surface-emitting lasers (VCSELs). The traditional parasitic extraction method, which uses a first-order low-pass filter transfer function, is oversimplified, and there are large deviations between the obtained data and the actual measured data. In this paper, we proposed a modified parasitic extraction method that described the extrinsic behaviour of the high-speed oxide-confined VCSELs well and easily extracted the values of all parasitic parameters. This method can also precisely fit microwave reflection coefficient S11 data even at high frequencies and provide design guidance for high-speed VCSELs. Using this method, a high-speed 850 nm VCSEL featuring a six-layer oxide aperture with −3 dB bandwidth up to 23.3 GHz was analysed. The electrical parasitics have been systematically extracted from VCSELs with different oxide apertures. The enhanced bandwidth based on the improvement of parasitic parameters was discussed. It was found that the critical parasitic factors that affect the −3 dB bandwidth of VCSELs are pad capacitance and inductance. Full article
(This article belongs to the Special Issue Advanced Semiconductor Lasers)
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