Advanced Memory Devices
A special issue of Applied Sciences (ISSN 2076-3417). This special issue belongs to the section "Optics and Lasers".
Deadline for manuscript submissions: closed (20 August 2020) | Viewed by 12819
Special Issue Editor
Interests: the characteristics and reliability of MOSFETs; metal-gate/high-k technology; advanced memory device fabrication; 3D process and device simulation; biosensor device fabrication and its applications
Special Issue Information
Dear Colleagues,
I would like to cordially invite you to contribute a paper to a Special Issue of the open access journal Applied Sciences, entitled “Advanced Memory Devices”, which aims to present recent developments of advanced memories with volatile and nonvolatile behaviors for applications in high-speed and low-power operation, high-density storage, biomedicine, Internet of Things (IoT), neural networks, artificial intelligence (AI), and so on.
This Special Issue contains volatile memories (DRAM and SRAM) and nonvolatile memories (flash, RRAM, MRAM, PCM, FeRAM, etc.) with novel device strucutres, materials, and design for some specific applications. I invite you to submit your research on these topics, in the form of original research papers and articles.
Dr. Jer-Chyi Wang
Guest Editor
Manuscript Submission Information
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Keywords
- volatile
- nonvolatile
- high-speed
- low-power
- high-density storage
- biomedicine
- Internet of Things (IoT)
- neural network
- artificial intelligence (AI)
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