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Article

A High-Flux Compact X-ray Free-Electron Laser for Next-Generation Chip Metrology Needs

by
James B. Rosenzweig
1,*,
Gerard Andonian
1,
Ronald Agustsson
2,
Petr M. Anisimov
3,
Aurora Araujo
2,
Fabio Bosco
1,
Martina Carillo
4,
Enrica Chiadroni
4,
Luca Giannessi
5,
Zhirong Huang
6,
Atsushi Fukasawa
1,
Dongsung Kim
3,
Sergey Kutsaev
2,
Gerard Lawler
1,
Zenghai Li
6,
Nathan Majernik
6,
Pratik Manwani
1,
Jared Maxson
7,
Janwei Miao
1,
Mauro Migliorati
4,
Andrea Mostacci
4,
Pietro Musumeci
1,
Alex Murokh
2,
Emilio Nanni
6,
Sean O’Tool
1,
Luigi Palumbo
4,
River Robles
6,
Yusuke Sakai
1,
Evgenya I. Simakov
3,
Madison Singleton
6,
Bruno Spataro
5,
Jingyi Tang
6,
Sami Tantawi
6,
Oliver Williams
1,
Haoran Xu
3 and
Monika Yadav
1add Show full author list remove Hide full author list
1
Department of Physics and Astronomy, University of California, Los Angeles, 470 Portola Plaza, Los Angeles, CA 90095, USA
2
RadiaBeam Technologies, 1717 Stewart Ave., Santa Monica, CA 90404, USA
3
Los Alamos National Laboratory, Los Alamos, NM 87545, USA
4
Dipartimento di Scienze di Base e Applicate per l’Ingegneria, University of Rome “La Sapienza”, 00161 Rome, Italy
5
INFN Laboratori Nazionali di Frascati, Via Enrico Fermi, 54, 00044 Rome, Italy
6
SLAC National Accelerator Laboratory, 2575 Sand Hill Rd., Menlo Park, CA 94025, USA
7
Department of Physics, Cornell University, 109 Clark Hall, Ithaca, NY 14853, USA
*
Author to whom correspondence should be addressed.
Instruments 2024, 8(1), 19; https://doi.org/10.3390/instruments8010019
Submission received: 22 November 2023 / Revised: 12 February 2024 / Accepted: 16 February 2024 / Published: 1 March 2024
(This article belongs to the Special Issue Selected Papers from the Workshop on Physics and Applications of High Brightness Beams)
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Abstract

Recently, considerable work has been directed at the development of an ultracompact X-ray free-electron laser (UCXFEL) based on emerging techniques in high-field cryogenic acceleration, with attendant dramatic improvements in electron beam brightness and state-of-the-art concepts in beam dynamics, magnetic undulators, and X-ray optics. A full conceptual design of a 1 nm (1.24 keV) UCXFEL with a length and cost over an order of magnitude below current X-ray free-electron lasers (XFELs) has resulted from this effort. This instrument has been developed with an emphasis on permitting exploratory scientific research in a wide variety of fields in a university setting. Concurrently, compact FELs are being vigorously developed for use as instruments to enable next-generation chip manufacturing through use as a high-flux, few nm lithography source. This new role suggests consideration of XFELs to urgently address emerging demands in the semiconductor device sector, as identified by recent national need studies, for new radiation sources aimed at chip manufacturing. Indeed, it has been shown that one may use coherent X-rays to perform 10–20 nm class resolution surveys of macroscopic, cm scale structures such as chips, using ptychographic laminography techniques. As the XFEL is a very promising candidate for realizing such methods, we present here an analysis of the issues and likely solutions associated with extending the UCXFEL to harder X-rays (above 7 keV), much higher fluxes, and increased levels of coherence, as well as methods of applying such a source for ptychographic laminography to microelectronic device measurements. We discuss the development path to move the concept to rapid realization of a transformative XFEL-based application, outlining both FEL and metrology system challenges.
Keywords: metrology; semiconductor; ptychography; laminography; free-electron laser; photoinjector; beam dynamics; undulator; coherence; X-ray metrology; semiconductor; ptychography; laminography; free-electron laser; photoinjector; beam dynamics; undulator; coherence; X-ray

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MDPI and ACS Style

Rosenzweig, J.B.; Andonian, G.; Agustsson, R.; Anisimov, P.M.; Araujo, A.; Bosco, F.; Carillo, M.; Chiadroni, E.; Giannessi, L.; Huang, Z.; et al. A High-Flux Compact X-ray Free-Electron Laser for Next-Generation Chip Metrology Needs. Instruments 2024, 8, 19. https://doi.org/10.3390/instruments8010019

AMA Style

Rosenzweig JB, Andonian G, Agustsson R, Anisimov PM, Araujo A, Bosco F, Carillo M, Chiadroni E, Giannessi L, Huang Z, et al. A High-Flux Compact X-ray Free-Electron Laser for Next-Generation Chip Metrology Needs. Instruments. 2024; 8(1):19. https://doi.org/10.3390/instruments8010019

Chicago/Turabian Style

Rosenzweig, James B., Gerard Andonian, Ronald Agustsson, Petr M. Anisimov, Aurora Araujo, Fabio Bosco, Martina Carillo, Enrica Chiadroni, Luca Giannessi, Zhirong Huang, and et al. 2024. "A High-Flux Compact X-ray Free-Electron Laser for Next-Generation Chip Metrology Needs" Instruments 8, no. 1: 19. https://doi.org/10.3390/instruments8010019

APA Style

Rosenzweig, J. B., Andonian, G., Agustsson, R., Anisimov, P. M., Araujo, A., Bosco, F., Carillo, M., Chiadroni, E., Giannessi, L., Huang, Z., Fukasawa, A., Kim, D., Kutsaev, S., Lawler, G., Li, Z., Majernik, N., Manwani, P., Maxson, J., Miao, J., ... Yadav, M. (2024). A High-Flux Compact X-ray Free-Electron Laser for Next-Generation Chip Metrology Needs. Instruments, 8(1), 19. https://doi.org/10.3390/instruments8010019

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