Long-Wavelength InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Si Substrate
Abstract
:1. Introduction
2. Quantum Dot Lasers on Si Substrates
2.1. MBE Growth and Effect of InAlAs/GaAs SLSs on the Quality of III-V Material Grown on Si Substrates
2.2. Device Fabrication of Si-Based Lasers
2.3. Results and Discussion
3. Quantum Dot SLDs on Si Substrates
3.1. Experimental Procedure
3.2. Results and Discussion
4. Conclusion
Acknowledgments
Author Contributions
Conflict of Interest
References
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Chen, S.; Tang, M.; Wu, J.; Jiang, Q.; Dorogan, V.; Benamara, M.; Mazur, Y.I.; Salamo, G.J.; Liu, H. Long-Wavelength InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Si Substrate. Photonics 2015, 2, 646-658. https://doi.org/10.3390/photonics2020646
Chen S, Tang M, Wu J, Jiang Q, Dorogan V, Benamara M, Mazur YI, Salamo GJ, Liu H. Long-Wavelength InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Si Substrate. Photonics. 2015; 2(2):646-658. https://doi.org/10.3390/photonics2020646
Chicago/Turabian StyleChen, Siming, Mingchu Tang, Jiang Wu, Qi Jiang, Vitaliy Dorogan, Mourad Benamara, Yuriy I. Mazur, Gregory J. Salamo, and Huiyun Liu. 2015. "Long-Wavelength InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Si Substrate" Photonics 2, no. 2: 646-658. https://doi.org/10.3390/photonics2020646