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Electronics2020, 9(2), 268;https://doi.org/10.3390/electronics9020268

Journal: ElectronicsVolume: 9Number: 268

Article: Investigation of Inhibited Channel Potential of 3D NAND Flash Memory According to Word-Line Location

Authors:
Sangwoo Han^1,†,
Youngseok Jeong^1,† and
Heesauk Jhon^2,*
et al.

Link: https://www.mdpi.com/2079-9292/9/2/268

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