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Journal: Electronics, 2020
Volume: 9
Number: 29
Article:
Effects of Equivalent-Oxide-Thickness and Fin-Width Scaling on In0.53Ga0.47As Tri-Gate Metal-Oxide-Semiconductor-Field-Effect-Transistors with Al2O3/HfO2 for Low-Power Logic Applications
Authors:
by
Tae-Woo Kim
Link:
https://www.mdpi.com/2079-9292/9/1/29
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