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Open AccessArticle

Effect of Annealing Ambient on SnO2 Thin Film Transistors Fabricated via An Ethanol-based Sol-gel Route

1
School of Electronics Engineering, Kyungpook National University, Daegu 41566, Korea
2
Department of Electronic and Electrical Convergence Engineering, Hongik University, Sejong 30016, Korea
*
Authors to whom correspondence should be addressed.
Electronics 2019, 8(9), 955; https://doi.org/10.3390/electronics8090955
Received: 5 August 2019 / Revised: 27 August 2019 / Accepted: 27 August 2019 / Published: 29 August 2019
(This article belongs to the Special Issue Applications of Thin Films in Microelectronics)
The effect of annealing ambient on SnO2 thin-film transistors (TFTs) fabricated via an ethanol-based sol-gel route was investigated. The annealing ambient has a significant effect on the structural characteristics and chemical composition and, in turn, the device performance. Although the crystalline-grain size of the SnO2 films annealed in air was the smallest, this size yielded the highest field-effect mobility. Compared with the minimization of boundary scattering via crystalline-size increase, augmentation of the free carrier concentration played a more critical role in the realization of high-performance devices. The fabricated SnO2 TFTs delivered a field-effect mobility, subthreshold swing, and on/off current ratio of 10.87 cm2/Vs, 0.87 V/decade, and 107, respectively. View Full-Text
Keywords: Sol-gel; SnO2; thin film transistor; annealing ambient Sol-gel; SnO2; thin film transistor; annealing ambient
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Lee, H.; Ha, S.; Bae, J.-H.; Kang, I.-M.; Kim, K.; Lee, W.-Y.; Jang, J. Effect of Annealing Ambient on SnO2 Thin Film Transistors Fabricated via An Ethanol-based Sol-gel Route. Electronics 2019, 8, 955.

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