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Open AccessArticle

Effect of Annealing Ambient on SnO2 Thin Film Transistors Fabricated via An Ethanol-based Sol-gel Route

School of Electronics Engineering, Kyungpook National University, Daegu 41566, Korea
Department of Electronic and Electrical Convergence Engineering, Hongik University, Sejong 30016, Korea
Authors to whom correspondence should be addressed.
Electronics 2019, 8(9), 955;
Received: 5 August 2019 / Revised: 27 August 2019 / Accepted: 27 August 2019 / Published: 29 August 2019
(This article belongs to the Special Issue Applications of Thin Films in Microelectronics)
The effect of annealing ambient on SnO2 thin-film transistors (TFTs) fabricated via an ethanol-based sol-gel route was investigated. The annealing ambient has a significant effect on the structural characteristics and chemical composition and, in turn, the device performance. Although the crystalline-grain size of the SnO2 films annealed in air was the smallest, this size yielded the highest field-effect mobility. Compared with the minimization of boundary scattering via crystalline-size increase, augmentation of the free carrier concentration played a more critical role in the realization of high-performance devices. The fabricated SnO2 TFTs delivered a field-effect mobility, subthreshold swing, and on/off current ratio of 10.87 cm2/Vs, 0.87 V/decade, and 107, respectively. View Full-Text
Keywords: Sol-gel; SnO2; thin film transistor; annealing ambient Sol-gel; SnO2; thin film transistor; annealing ambient
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Lee, H.; Ha, S.; Bae, J.-H.; Kang, I.-M.; Kim, K.; Lee, W.-Y.; Jang, J. Effect of Annealing Ambient on SnO2 Thin Film Transistors Fabricated via An Ethanol-based Sol-gel Route. Electronics 2019, 8, 955.

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