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Journal: Electronics, 2018
Volume: 7
Number: 353
Article:
A New Study on the Temperature and Bias Dependence of the Kink Effects in S22 and h21 for the GaN HEMT Technology
Authors:
by
Giovanni Crupi, Antonio Raffo, Valeria Vadalà , Giorgio Vannini and Alina Caddemi
Link:
https://www.mdpi.com/2079-9292/7/12/353
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