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Journal: Electronics, 2018
Volume: 7
Number: 353

Article: A New Study on the Temperature and Bias Dependence of the Kink Effects in S22 and h21 for the GaN HEMT Technology
Authors: by Giovanni Crupi, Antonio Raffo, Valeria Vadalà, Giorgio Vannini and Alina Caddemi
Link: https://www.mdpi.com/2079-9292/7/12/353

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