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Electronics2018, 7(12), 353;https://doi.org/10.3390/electronics7120353

Journal: ElectronicsVolume: 7Number: 353

Article: A New Study on the Temperature and Bias Dependence of the Kink Effects in S₂₂ and h₂₁ for the GaN HEMT Technology

Authors:
Giovanni Crupi^1,*,
Antonio Raffo² and
Valeria Vadalà²
et al.

Link: https://www.mdpi.com/2079-9292/7/12/353

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