Karrame, K.; Chang, C.; Nallatamby, J.-C.; Colas, M.; Sommet, R.
Joint Use of Thermal Characterization and Simulation of AlGaN/GaN High-Electron Mobility Transistors in Transient and Steady State Regimes to Estimate the Hotspot Temperature. Electronics 2025, 14, 935.
https://doi.org/10.3390/electronics14050935
AMA Style
Karrame K, Chang C, Nallatamby J-C, Colas M, Sommet R.
Joint Use of Thermal Characterization and Simulation of AlGaN/GaN High-Electron Mobility Transistors in Transient and Steady State Regimes to Estimate the Hotspot Temperature. Electronics. 2025; 14(5):935.
https://doi.org/10.3390/electronics14050935
Chicago/Turabian Style
Karrame, Khalil, Christophe Chang, Jean-Christophe Nallatamby, Maggy Colas, and Raphael Sommet.
2025. "Joint Use of Thermal Characterization and Simulation of AlGaN/GaN High-Electron Mobility Transistors in Transient and Steady State Regimes to Estimate the Hotspot Temperature" Electronics 14, no. 5: 935.
https://doi.org/10.3390/electronics14050935
APA Style
Karrame, K., Chang, C., Nallatamby, J.-C., Colas, M., & Sommet, R.
(2025). Joint Use of Thermal Characterization and Simulation of AlGaN/GaN High-Electron Mobility Transistors in Transient and Steady State Regimes to Estimate the Hotspot Temperature. Electronics, 14(5), 935.
https://doi.org/10.3390/electronics14050935
