Sarajlić, M.; Stevanović, J.N.; Kramberger, G.; Hiti, B.; Cvetanović, K.; Ilić, S.D.; Rašljić Rafajilović, M.
Spatially Resolved Transient Current Technique Characterization of an Asymmetric p-i-p Silicon Diode Under Multi-Wavelength Excitation. Electronics 2025, 14, 4802.
https://doi.org/10.3390/electronics14244802
AMA Style
Sarajlić M, Stevanović JN, Kramberger G, Hiti B, Cvetanović K, Ilić SD, Rašljić Rafajilović M.
Spatially Resolved Transient Current Technique Characterization of an Asymmetric p-i-p Silicon Diode Under Multi-Wavelength Excitation. Electronics. 2025; 14(24):4802.
https://doi.org/10.3390/electronics14244802
Chicago/Turabian Style
Sarajlić, Milija, Jelena N. Stevanović, Gregor Kramberger, Bojan Hiti, Katarina Cvetanović, Stefan D. Ilić, and Milena Rašljić Rafajilović.
2025. "Spatially Resolved Transient Current Technique Characterization of an Asymmetric p-i-p Silicon Diode Under Multi-Wavelength Excitation" Electronics 14, no. 24: 4802.
https://doi.org/10.3390/electronics14244802
APA Style
Sarajlić, M., Stevanović, J. N., Kramberger, G., Hiti, B., Cvetanović, K., Ilić, S. D., & Rašljić Rafajilović, M.
(2025). Spatially Resolved Transient Current Technique Characterization of an Asymmetric p-i-p Silicon Diode Under Multi-Wavelength Excitation. Electronics, 14(24), 4802.
https://doi.org/10.3390/electronics14244802
