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Journal: ElectronicsVolume: 13Number: 2997
Article: Synergistic Effects of Total Ionizing Dose and Single-Event Upset in 130 nm 7T Silicon-on-Insulator Static Random Access Memory
  • Authors:
  • Zheng Zhang1,2,
  • Gang Guo1,2,* and
  • Linfei Wang3
  • et al.
Link: https://www.mdpi.com/2079-9292/13/15/2997

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