Order Article Reprints

Zhang Z, Guo G, Wang L, Xiao S, Chen Q, Gao L, Wang C, Li F, Zhang F, Zhao S, et al. Synergistic Effects of Total Ionizing Dose and Single-Event Upset in 130 nm 7T Silicon-on-Insulator Static Random Access Memory. Electronics. 2024; 13(15):2997. https://doi.org/10.3390/electronics13152997

Zhang, Zheng, Gang Guo, Linfei Wang, Shuyan Xiao, Qiming Chen, Linchun Gao, Chunlin Wang, Futang Li, Fuqiang Zhang, Shuyong Zhao, and et al. 2024. "Synergistic Effects of Total Ionizing Dose and Single-Event Upset in 130 nm 7T Silicon-on-Insulator Static Random Access Memory" Electronics 13, no. 15: 2997. https://doi.org/10.3390/electronics13152997

Zhang, Z., Guo, G., Wang, L., Xiao, S., Chen, Q., Gao, L., Wang, C., Li, F., Zhang, F., Zhao, S., & Liu, J. (2024). Synergistic Effects of Total Ionizing Dose and Single-Event Upset in 130 nm 7T Silicon-on-Insulator Static Random Access Memory. Electronics, 13(15), 2997. https://doi.org/10.3390/electronics13152997