Article Versions Notes

Ding X, Yuan X, Ju T, Yu G, Zhang B, Du Z, Zeng Z, Zhang B, Zhang X. p-GaN Selective Passivation via H Ion Implantation to Obtain a p-GaN Gate Normally off AlGaN/GaN HEMT. Electronics. 2023; 12(6):1424. https://doi.org/10.3390/electronics12061424

Ding, Xiaoyu, Xu Yuan, Tao Ju, Guohao Yu, Bingliang Zhang, Zhongkai Du, Zhongming Zeng, Baoshun Zhang, and Xinping Zhang. 2023. "p-GaN Selective Passivation via H Ion Implantation to Obtain a p-GaN Gate Normally off AlGaN/GaN HEMT" Electronics 12, no. 6: 1424. https://doi.org/10.3390/electronics12061424

Ding, X., Yuan, X., Ju, T., Yu, G., Zhang, B., Du, Z., Zeng, Z., Zhang, B., & Zhang, X. (2023). p-GaN Selective Passivation via H Ion Implantation to Obtain a p-GaN Gate Normally off AlGaN/GaN HEMT. Electronics, 12(6), 1424. https://doi.org/10.3390/electronics12061424