Chen, R.; Chen, L.; Li, S.; Liu, R.; Li, X.; Shi, S.; Gu, C.; Han, J.
Single-Event Transient Study of 28 nm UTBB-FDSOI Technology Using Pulsed Laser Mapping. Electronics 2023, 12, 1214.
https://doi.org/10.3390/electronics12051214
AMA Style
Chen R, Chen L, Li S, Liu R, Li X, Shi S, Gu C, Han J.
Single-Event Transient Study of 28 nm UTBB-FDSOI Technology Using Pulsed Laser Mapping. Electronics. 2023; 12(5):1214.
https://doi.org/10.3390/electronics12051214
Chicago/Turabian Style
Chen, Rui, Li Chen, Sai Li, Rui Liu, Xuantian Li, Shuting Shi, Cheng Gu, and Jianwei Han.
2023. "Single-Event Transient Study of 28 nm UTBB-FDSOI Technology Using Pulsed Laser Mapping" Electronics 12, no. 5: 1214.
https://doi.org/10.3390/electronics12051214
APA Style
Chen, R., Chen, L., Li, S., Liu, R., Li, X., Shi, S., Gu, C., & Han, J.
(2023). Single-Event Transient Study of 28 nm UTBB-FDSOI Technology Using Pulsed Laser Mapping. Electronics, 12(5), 1214.
https://doi.org/10.3390/electronics12051214