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Journal: ElectronicsVolume: 12Number: 1087
Article: Modeling on Monolithic Integration Structure of AlGaN/InGaN/GaN High Electron Mobility Transistors and LEDs: 2DEG Density and Radiative Recombination
  • Authors:
  • Yuan An1,
  • Kailin Ren1,2,* and
  • Luqiao Yin1,2
  • et al.
Link: https://www.mdpi.com/2079-9292/12/5/1087

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