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Journal: Electronics, 2023
Volume: 12
Number: 1087

Article: Modeling on Monolithic Integration Structure of AlGaN/InGaN/GaN High Electron Mobility Transistors and LEDs: 2DEG Density and Radiative Recombination
Authors: by Yuan An, Kailin Ren, Luqiao Yin and Jianhua Zhang
Link: https://www.mdpi.com/2079-9292/12/5/1087

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