Order Article Reprints

Wang D, Sun X, Liu T, Chen K, Yang J, Wu C, Xu M, Zhang W. Investigation of Source/Drain Recess Engineering and Its Impacts on FinFET and GAA Nanosheet FET at 5 nm Node. Electronics. 2023; 12(3):770. https://doi.org/10.3390/electronics12030770

Wang, Dawei, Xin Sun, Tao Liu, Kun Chen, Jingwen Yang, Chunlei Wu, Min Xu, and Wei (David) Zhang. 2023. "Investigation of Source/Drain Recess Engineering and Its Impacts on FinFET and GAA Nanosheet FET at 5 nm Node" Electronics 12, no. 3: 770. https://doi.org/10.3390/electronics12030770

Wang, D., Sun, X., Liu, T., Chen, K., Yang, J., Wu, C., Xu, M., & Zhang, W. (2023). Investigation of Source/Drain Recess Engineering and Its Impacts on FinFET and GAA Nanosheet FET at 5 nm Node. Electronics, 12(3), 770. https://doi.org/10.3390/electronics12030770