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Volume 12
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Article

Observation of Large Threshold Voltage Shift Induced by Pre-applied Voltage to SiO2 Gate Dielectric in Organic Field-Effect Transistors

by
Yifu Guo
1,
Junyang Deng
2,3,
Jiebin Niu
2,
Chunhui Duan
4,
Shibing Long
1,
Mengmeng Li
2,3,* and
Ling Li
2
1
School of Microelectronics, University of Science and Technology of China, Hefei 230026, China
2
Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
3
University of Chinese Academy of Sciences, Beijing 100049, China
4
Institute of Polymer Optoelectronic Materials & Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
*
Author to whom correspondence should be addressed.
Electronics 2023, 12(3), 540; https://doi.org/10.3390/electronics12030540
Submission received: 20 December 2022 / Revised: 5 January 2023 / Accepted: 17 January 2023 / Published: 20 January 2023
(This article belongs to the Special Issue Feature Papers in the Optoelectronics Section)
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Abstract

Field-effect transistors based on organic semiconducting materials (OFETs) have unique advantages of intrinsically mechanical flexibility, simple preparation process, low manufacturing cost, and large-area preparation. Through the innovation of new material design and device structures, the performance of device parameters such as mobility, on–off current ratio, and the threshold voltage (VTH) of OFETs continues to improve. However, the VTH shift of OFETs has always been an important problem restricting their practical applications. In this work, we observe that the VTH of polymer OFETs with the widely investigated device structure of a SiO2 bottom-gate dielectric is noticeably shifted by pre-applying a large gate voltage. Such a shift in VTH remains to a large extent, even after modifying the surface of the SiO2 dielectric using a hexamethyldisilazane (HMDS) self-assembled monolayer. This behavior of VTH can be ascribed to the charge trappings at the bulk of the SiO2. In addition, the generality of this observation is further proven by using two other conjugated polymers including p-type PDPP3T and n-type PTzNDI-2FT, and a similar trend is obtained.
Keywords: organic field-effect transistor; threshold voltage shift; charge trapping; pre-applied voltage organic field-effect transistor; threshold voltage shift; charge trapping; pre-applied voltage

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MDPI and ACS Style

Guo, Y.; Deng, J.; Niu, J.; Duan, C.; Long, S.; Li, M.; Li, L. Observation of Large Threshold Voltage Shift Induced by Pre-applied Voltage to SiO2 Gate Dielectric in Organic Field-Effect Transistors. Electronics 2023, 12, 540. https://doi.org/10.3390/electronics12030540

AMA Style

Guo Y, Deng J, Niu J, Duan C, Long S, Li M, Li L. Observation of Large Threshold Voltage Shift Induced by Pre-applied Voltage to SiO2 Gate Dielectric in Organic Field-Effect Transistors. Electronics. 2023; 12(3):540. https://doi.org/10.3390/electronics12030540

Chicago/Turabian Style

Guo, Yifu, Junyang Deng, Jiebin Niu, Chunhui Duan, Shibing Long, Mengmeng Li, and Ling Li. 2023. "Observation of Large Threshold Voltage Shift Induced by Pre-applied Voltage to SiO2 Gate Dielectric in Organic Field-Effect Transistors" Electronics 12, no. 3: 540. https://doi.org/10.3390/electronics12030540

APA Style

Guo, Y., Deng, J., Niu, J., Duan, C., Long, S., Li, M., & Li, L. (2023). Observation of Large Threshold Voltage Shift Induced by Pre-applied Voltage to SiO2 Gate Dielectric in Organic Field-Effect Transistors. Electronics, 12(3), 540. https://doi.org/10.3390/electronics12030540

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