Guo, Y.; Deng, J.; Niu, J.; Duan, C.; Long, S.; Li, M.; Li, L.
Observation of Large Threshold Voltage Shift Induced by Pre-applied Voltage to SiO2 Gate Dielectric in Organic Field-Effect Transistors. Electronics 2023, 12, 540.
https://doi.org/10.3390/electronics12030540
AMA Style
Guo Y, Deng J, Niu J, Duan C, Long S, Li M, Li L.
Observation of Large Threshold Voltage Shift Induced by Pre-applied Voltage to SiO2 Gate Dielectric in Organic Field-Effect Transistors. Electronics. 2023; 12(3):540.
https://doi.org/10.3390/electronics12030540
Chicago/Turabian Style
Guo, Yifu, Junyang Deng, Jiebin Niu, Chunhui Duan, Shibing Long, Mengmeng Li, and Ling Li.
2023. "Observation of Large Threshold Voltage Shift Induced by Pre-applied Voltage to SiO2 Gate Dielectric in Organic Field-Effect Transistors" Electronics 12, no. 3: 540.
https://doi.org/10.3390/electronics12030540
APA Style
Guo, Y., Deng, J., Niu, J., Duan, C., Long, S., Li, M., & Li, L.
(2023). Observation of Large Threshold Voltage Shift Induced by Pre-applied Voltage to SiO2 Gate Dielectric in Organic Field-Effect Transistors. Electronics, 12(3), 540.
https://doi.org/10.3390/electronics12030540