Order Article Reprints

Lu X, Guo H, Lei Z, Peng C, Zhang Z, Zhang H, Ma T, Feng Y, Ma W, Zhong X, et al. Study of High-Energy Proton Irradiation Effects in Top-Gate Graphene Field-Effect Transistors. Electronics. 2023; 12(23):4837. https://doi.org/10.3390/electronics12234837

Lu, Xiaojie, Hongxia Guo, Zhifeng Lei, Chao Peng, Zhangang Zhang, Hong Zhang, Teng Ma, Yahui Feng, Wuying Ma, Xiangli Zhong, and et al. 2023. "Study of High-Energy Proton Irradiation Effects in Top-Gate Graphene Field-Effect Transistors" Electronics 12, no. 23: 4837. https://doi.org/10.3390/electronics12234837

Lu, X., Guo, H., Lei, Z., Peng, C., Zhang, Z., Zhang, H., Ma, T., Feng, Y., Ma, W., Zhong, X., Li, J., Li, Y., & Bai, R. (2023). Study of High-Energy Proton Irradiation Effects in Top-Gate Graphene Field-Effect Transistors. Electronics, 12(23), 4837. https://doi.org/10.3390/electronics12234837