Liu, M.; He, C.; Feng, J.; Xun, M.; Sun, J.; Li, Y.; Guo, Q.
Analysis of Difference in Areal Density Aluminum Equivalent Method in Ionizing Total Dose Shielding Analysis of Semiconductor Devices. Electronics 2023, 12, 4181.
https://doi.org/10.3390/electronics12194181
AMA Style
Liu M, He C, Feng J, Xun M, Sun J, Li Y, Guo Q.
Analysis of Difference in Areal Density Aluminum Equivalent Method in Ionizing Total Dose Shielding Analysis of Semiconductor Devices. Electronics. 2023; 12(19):4181.
https://doi.org/10.3390/electronics12194181
Chicago/Turabian Style
Liu, Mingyu, Chengfa He, Jie Feng, Mingzhu Xun, Jing Sun, Yudong Li, and Qi Guo.
2023. "Analysis of Difference in Areal Density Aluminum Equivalent Method in Ionizing Total Dose Shielding Analysis of Semiconductor Devices" Electronics 12, no. 19: 4181.
https://doi.org/10.3390/electronics12194181
APA Style
Liu, M., He, C., Feng, J., Xun, M., Sun, J., Li, Y., & Guo, Q.
(2023). Analysis of Difference in Areal Density Aluminum Equivalent Method in Ionizing Total Dose Shielding Analysis of Semiconductor Devices. Electronics, 12(19), 4181.
https://doi.org/10.3390/electronics12194181