Order Article Reprints

Sun H, Guo G, Sun R, Zhao W, Zhang F, Liu J, Zhang Z, Chen Y, Zhao Y. Study on Single Event Upsets in a 28 nm Technology Static Random Access Memory Device Based on Micro-Beam Irradiation. Electronics. 2022; 11(20):3413. https://doi.org/10.3390/electronics11203413

Sun, Haohan, Gang Guo, Ruinan Sun, Wen Zhao, Fengqi Zhang, Jiancheng Liu, Zheng Zhang, Ya Chen, and Yongle Zhao. 2022. "Study on Single Event Upsets in a 28 nm Technology Static Random Access Memory Device Based on Micro-Beam Irradiation" Electronics 11, no. 20: 3413. https://doi.org/10.3390/electronics11203413

Sun, H., Guo, G., Sun, R., Zhao, W., Zhang, F., Liu, J., Zhang, Z., Chen, Y., & Zhao, Y. (2022). Study on Single Event Upsets in a 28 nm Technology Static Random Access Memory Device Based on Micro-Beam Irradiation. Electronics, 11(20), 3413. https://doi.org/10.3390/electronics11203413