Article Versions Notes

Pharkphoumy S, Janardhanam V, Jang T-H, Park J, Shim K-H, Choi C-J. Optimized Device Geometry of Normally-On Field-Plate AlGaN/GaN High Electron Mobility Transistors for High Breakdown Performance Using TCAD Simulation. Electronics. 2021; 10(21):2642. https://doi.org/10.3390/electronics10212642

Pharkphoumy, Sakhone, Vallivedu Janardhanam, Tae-Hoon Jang, Jaejun Park, Kyu-Hwan Shim, and Chel-Jong Choi. 2021. "Optimized Device Geometry of Normally-On Field-Plate AlGaN/GaN High Electron Mobility Transistors for High Breakdown Performance Using TCAD Simulation" Electronics 10, no. 21: 2642. https://doi.org/10.3390/electronics10212642

Pharkphoumy, S., Janardhanam, V., Jang, T.-H., Park, J., Shim, K.-H., & Choi, C.-J. (2021). Optimized Device Geometry of Normally-On Field-Plate AlGaN/GaN High Electron Mobility Transistors for High Breakdown Performance Using TCAD Simulation. Electronics, 10(21), 2642. https://doi.org/10.3390/electronics10212642