Systematical Study of the Basic Properties of Surface Acoustic Wave Devices Based on ZnO and GaN Multilayers

Shen, Junyao; Fu, Sulei; Su, Rongxuan; Xu, Huiping; Zeng, Fei; Song, Cheng; Pan, Feng

doi:10.3390/electronics10010023

Open AccessArticle

Systematical Study of the Basic Properties of Surface Acoustic Wave Devices Based on ZnO and GaN Multilayers

by

Junyao Shen

,

Sulei Fu

^*,

Rongxuan Su

,

Huiping Xu

,

Fei Zeng

,

Cheng Song

and

Feng Pan

^*

Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China

^*

Authors to whom correspondence should be addressed.

Electronics 2021, 10(1), 23; https://doi.org/10.3390/electronics10010023

Submission received: 28 November 2020 / Revised: 21 December 2020 / Accepted: 23 December 2020 / Published: 25 December 2020

(This article belongs to the Special Issue Gallium Nitride HEMTs: Characterization, Modeling and Design Techniques for Microwave and Millimeter-Wave Applications)

Download

Browse Figures

Versions Notes

Abstract

Recently, surface acoustic wave (SAW) devices based on layered structures are a popular area of research. Multilayered structures, including ZnO and GaN, have shown great performance and can be applied in diverse fields. Meanwhile, thin films, such as AlGaN and n-ZnO, can be added to these structures to form a 2-D electron gas (2DEG) which makes the devices tunable. This work systematically studies the basic properties of SAW devices based on ZnO and GaN multilayers via COMSOL Multiphysics. The sorts of structures with different crystal orientations are simulated, and various acoustic modes are considered. Results show that a range of phase velocity from about 2700 m/s to 6500 m/s can be achieved, and devices based on ZnO and GaN multilayers can meet the requirements of the electromechanical coupling coefficient from about 0 to 7%. Every structure’s unique properties are valuable for diverse applications. For example, c-ZnO/c-GaN/c-sapphire structure can be used for high-frequency and large-bandwidth SAW devices, while SAW devices based on a-ZnO/a-GaN/r-sapphire and 2DEG are suitable for programmable SAW sensors. This work has great reference value for future research into SAW devices.

Keywords: surface acoustic wave; ZnO; GaN; 2-D electron gas; multilayer

Share and Cite

MDPI and ACS Style

Shen, J.; Fu, S.; Su, R.; Xu, H.; Zeng, F.; Song, C.; Pan, F. Systematical Study of the Basic Properties of Surface Acoustic Wave Devices Based on ZnO and GaN Multilayers. Electronics 2021, 10, 23. https://doi.org/10.3390/electronics10010023

AMA Style

Shen J, Fu S, Su R, Xu H, Zeng F, Song C, Pan F. Systematical Study of the Basic Properties of Surface Acoustic Wave Devices Based on ZnO and GaN Multilayers. Electronics. 2021; 10(1):23. https://doi.org/10.3390/electronics10010023

Chicago/Turabian Style

Shen, Junyao, Sulei Fu, Rongxuan Su, Huiping Xu, Fei Zeng, Cheng Song, and Feng Pan. 2021. "Systematical Study of the Basic Properties of Surface Acoustic Wave Devices Based on ZnO and GaN Multilayers" Electronics 10, no. 1: 23. https://doi.org/10.3390/electronics10010023

APA Style

Shen, J., Fu, S., Su, R., Xu, H., Zeng, F., Song, C., & Pan, F. (2021). Systematical Study of the Basic Properties of Surface Acoustic Wave Devices Based on ZnO and GaN Multilayers. Electronics, 10(1), 23. https://doi.org/10.3390/electronics10010023

Note that from the first issue of 2016, this journal uses article numbers instead of page numbers. See further details here.

Article Menu

Systematical Study of the Basic Properties of Surface Acoustic Wave Devices Based on ZnO and GaN Multilayers

Abstract

Share and Cite

Article Metrics

Article Access Statistics

Further Information

Guidelines

MDPI Initiatives

Follow MDPI