Palade, C.; Slav, A.; Cojocaru, O.; Teodorescu, V.S.; Stoica, T.; Ciurea, M.L.; Lepadatu, A.-M.
SiGeSn Quantum Dots in HfO2 for Floating Gate Memory Capacitors. Coatings 2022, 12, 348.
https://doi.org/10.3390/coatings12030348
AMA Style
Palade C, Slav A, Cojocaru O, Teodorescu VS, Stoica T, Ciurea ML, Lepadatu A-M.
SiGeSn Quantum Dots in HfO2 for Floating Gate Memory Capacitors. Coatings. 2022; 12(3):348.
https://doi.org/10.3390/coatings12030348
Chicago/Turabian Style
Palade, Catalin, Adrian Slav, Ovidiu Cojocaru, Valentin Serban Teodorescu, Toma Stoica, Magdalena Lidia Ciurea, and Ana-Maria Lepadatu.
2022. "SiGeSn Quantum Dots in HfO2 for Floating Gate Memory Capacitors" Coatings 12, no. 3: 348.
https://doi.org/10.3390/coatings12030348
APA Style
Palade, C., Slav, A., Cojocaru, O., Teodorescu, V. S., Stoica, T., Ciurea, M. L., & Lepadatu, A.-M.
(2022). SiGeSn Quantum Dots in HfO2 for Floating Gate Memory Capacitors. Coatings, 12(3), 348.
https://doi.org/10.3390/coatings12030348