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Open AccessArticle

Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice

1
State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China
2
SMIT Center, School of Automation and Mechanical Engineering, Shanghai University, Shanghai 201800, China
3
Shanghai Key Laboratory of Modern Optical System, School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
4
Department of Mechanical Engineering Science, University of Johannesburg, Johannesburg ZA-2006, South Africa
*
Author to whom correspondence should be addressed.
Nanomaterials 2019, 9(1), 55; https://doi.org/10.3390/nano9010055
Received: 13 December 2018 / Revised: 26 December 2018 / Accepted: 27 December 2018 / Published: 3 January 2019
Atomic scale control of the thickness of thin film makes atomic layer deposition highly advantageous in the preparation of high quality super-lattices. However, precisely controlling the film chemical stoichiometry is very challenging. In this study, we deposited SiOx film with different stoichiometry by plasma enhanced atomic layer deposition. After reviewing various deposition parameters like temperature, precursor pulse time, and gas flow, the silicon dioxides of stoichiometric (SiO2) and non-stoichiometric (SiO1.8 and SiO1.6) were successfully fabricated. X-ray photo-electron spectroscopy was first employed to analyze the element content and chemical bonding energy of these films. Then the morphology, structure, composition, and optical characteristics of SiOx film were systematically studied through atomic force microscope, transmission electron microscopy, X-ray reflection, and spectroscopic ellipsometry. The experimental results indicate that both the mass density and refractive index of SiO1.8 and SiO1.6 are less than SiO2 film. The energy band-gap is approved by spectroscopic ellipsometry data and X-ray photo-electron spectroscopy O 1s analysis. The results demonstrate that the energy band-gap decreases as the oxygen concentration decreases in SiOx film. After we obtained the Si-rich silicon oxide film deposition, the SiO1.6/SiO2 super-lattices was fabricated and its photoluminescence (PL) property was characterized by PL spectra. The weak PL intensity gives us greater awareness that more research is needed in order to decrease the x of SiOx film to a larger extent through further optimizing plasma-enhanced atomic layer deposition processes, and hence improve the photoluminescence properties of SiOx/SiO2 super-lattices. View Full-Text
Keywords: SiOx; SiO2; plasma-enhanced atomic layer deposition (PEALD); stoichiometry; superlattice SiOx; SiO2; plasma-enhanced atomic layer deposition (PEALD); stoichiometry; superlattice
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MDPI and ACS Style

Ma, H.-P.; Yang, J.-H.; Yang, J.-G.; Zhu, L.-Y.; Huang, W.; Yuan, G.-J.; Feng, J.-J.; Jen, T.-C.; Lu, H.-L. Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice. Nanomaterials 2019, 9, 55. https://doi.org/10.3390/nano9010055

AMA Style

Ma H-P, Yang J-H, Yang J-G, Zhu L-Y, Huang W, Yuan G-J, Feng J-J, Jen T-C, Lu H-L. Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice. Nanomaterials. 2019; 9(1):55. https://doi.org/10.3390/nano9010055

Chicago/Turabian Style

Ma, Hong-Ping; Yang, Jia-He; Yang, Jian-Guo; Zhu, Li-Yuan; Huang, Wei; Yuan, Guang-Jie; Feng, Ji-Jun; Jen, Tien-Chien; Lu, Hong-Liang. 2019. "Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice" Nanomaterials 9, no. 1: 55. https://doi.org/10.3390/nano9010055

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