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Open AccessArticle

Realization of the Kohn’s Theorem in Ge/Si Quantum Dots with Hole Gas: Theory and Experiment

1
Institute of Engineering and Physics, Russian-Armenian University, Yerevan 0051, Armenia
2
Institute of Physics, Nanotechnology and Telecommunications, Peter the Great St. Petersburg Polytechnic University, Saint Petersburg 195251, Russia
3
Department of Physics, Yerevan State University, Yerevan 0025, Armenia
4
Department of Physics, Jackson State University, Jackson, MS 39217, USA
5
OSRAM Opto Semiconductors, 93055 Regensburg, Germany
*
Author to whom correspondence should be addressed.
Nanomaterials 2019, 9(1), 56; https://doi.org/10.3390/nano9010056
Received: 15 November 2018 / Revised: 20 December 2018 / Accepted: 25 December 2018 / Published: 3 January 2019
(This article belongs to the Special Issue Applications of Quantum Dots)
This article discusses specific quantum transitions in a few-particle hole gas, localized in a strongly oblate lens-shaped quantum dot. Based on the adiabatic method, the possibility of realizing the generalized Kohn theorem in such a system is shown. The criteria for the implementation of this theorem in a lens-shaped quantum dot, fulfilled in the experiment, is presented. An analytical expression is obtained for the frequencies of resonant absorption of far-infrared radiation by a gas of heavy holes, which depends on the geometric parameters of the quantum dot. The results of experiments on far-infrared absorption in the arrays of p-doped Ge/Si quantum dots grown by molecular beam epitaxy (MBE) with gradually increasing average number of holes in dot are presented. Experimental results show that the Coulomb interaction between the holes does not affect the resonant frequency of the transitions. A good agreement between the theoretical and experimental results is shown. View Full-Text
Keywords: quantum dots; Kohn theorem; adiabatic approximation; few-particle interaction; far-IR absorption; Ge/Si quantum dots; Kohn theorem; adiabatic approximation; few-particle interaction; far-IR absorption; Ge/Si
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Sarkisyan, H.A.; Hayrapetyan, D.B.; Petrosyan, L.S.; Kazaryan, E.M.; Sofronov, A.N.; Balagula, R.M.; Firsov, D.A.; Vorobjev, L.E.; Tonkikh, A.A. Realization of the Kohn’s Theorem in Ge/Si Quantum Dots with Hole Gas: Theory and Experiment. Nanomaterials 2019, 9, 56.

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