Giubileo, F.; Di Bartolomeo, A.; Martucciello, N.; Romeo, F.; Iemmo, L.; Romano, P.; Passacantando, M.
Contact Resistance and Channel Conductance of Graphene Field-Effect Transistors under Low-Energy Electron Irradiation. Nanomaterials 2016, 6, 206.
https://doi.org/10.3390/nano6110206
AMA Style
Giubileo F, Di Bartolomeo A, Martucciello N, Romeo F, Iemmo L, Romano P, Passacantando M.
Contact Resistance and Channel Conductance of Graphene Field-Effect Transistors under Low-Energy Electron Irradiation. Nanomaterials. 2016; 6(11):206.
https://doi.org/10.3390/nano6110206
Chicago/Turabian Style
Giubileo, Filippo, Antonio Di Bartolomeo, Nadia Martucciello, Francesco Romeo, Laura Iemmo, Paola Romano, and Maurizio Passacantando.
2016. "Contact Resistance and Channel Conductance of Graphene Field-Effect Transistors under Low-Energy Electron Irradiation" Nanomaterials 6, no. 11: 206.
https://doi.org/10.3390/nano6110206
APA Style
Giubileo, F., Di Bartolomeo, A., Martucciello, N., Romeo, F., Iemmo, L., Romano, P., & Passacantando, M.
(2016). Contact Resistance and Channel Conductance of Graphene Field-Effect Transistors under Low-Energy Electron Irradiation. Nanomaterials, 6(11), 206.
https://doi.org/10.3390/nano6110206