Article Versions Notes

Li S, Wu M, Yang L, Lu H, Hou B, Zhang M, Ma X, Hao Y. High Reliability and Breakdown Voltage of GaN HEMTs on Free-Standing GaN Substrates. Nanomaterials. 2025; 15(24):1882. https://doi.org/10.3390/nano15241882

Li, Shiming, Mei Wu, Ling Yang, Hao Lu, Bin Hou, Meng Zhang, Xiaohua Ma, and Yue Hao. 2025. "High Reliability and Breakdown Voltage of GaN HEMTs on Free-Standing GaN Substrates" Nanomaterials 15, no. 24: 1882. https://doi.org/10.3390/nano15241882

Li, S., Wu, M., Yang, L., Lu, H., Hou, B., Zhang, M., Ma, X., & Hao, Y. (2025). High Reliability and Breakdown Voltage of GaN HEMTs on Free-Standing GaN Substrates. Nanomaterials, 15(24), 1882. https://doi.org/10.3390/nano15241882