Abraham, J.; Shepherd, N.D.; Littler, C.; Syllaios, A.J.; Philipose, U.
Engineering the Morphology and Properties of MoS2 Films Through Gaseous Precursor-Induced Vacancy Defect Control. Nanomaterials 2025, 15, 1723.
https://doi.org/10.3390/nano15221723
AMA Style
Abraham J, Shepherd ND, Littler C, Syllaios AJ, Philipose U.
Engineering the Morphology and Properties of MoS2 Films Through Gaseous Precursor-Induced Vacancy Defect Control. Nanomaterials. 2025; 15(22):1723.
https://doi.org/10.3390/nano15221723
Chicago/Turabian Style
Abraham, James, Nigel D. Shepherd, Chris Littler, A. J. Syllaios, and Usha Philipose.
2025. "Engineering the Morphology and Properties of MoS2 Films Through Gaseous Precursor-Induced Vacancy Defect Control" Nanomaterials 15, no. 22: 1723.
https://doi.org/10.3390/nano15221723
APA Style
Abraham, J., Shepherd, N. D., Littler, C., Syllaios, A. J., & Philipose, U.
(2025). Engineering the Morphology and Properties of MoS2 Films Through Gaseous Precursor-Induced Vacancy Defect Control. Nanomaterials, 15(22), 1723.
https://doi.org/10.3390/nano15221723