Kim, S.-M.; Jun, J.H.; Lee, J.; Taqi, M.; Shin, H.; Lee, S.; Lee, H.; Yoo, W.J.; Lee, B.H.
Demonstration of Steep Switching Behavior Based on Band Modulation in WSe2 Feedback Field-Effect Transistor. Nanomaterials 2024, 14, 1667.
https://doi.org/10.3390/nano14201667
AMA Style
Kim S-M, Jun JH, Lee J, Taqi M, Shin H, Lee S, Lee H, Yoo WJ, Lee BH.
Demonstration of Steep Switching Behavior Based on Band Modulation in WSe2 Feedback Field-Effect Transistor. Nanomaterials. 2024; 14(20):1667.
https://doi.org/10.3390/nano14201667
Chicago/Turabian Style
Kim, Seung-Mo, Jae Hyeon Jun, Junho Lee, Muhammad Taqi, Hoseong Shin, Sungwon Lee, Haewon Lee, Won Jong Yoo, and Byoung Hun Lee.
2024. "Demonstration of Steep Switching Behavior Based on Band Modulation in WSe2 Feedback Field-Effect Transistor" Nanomaterials 14, no. 20: 1667.
https://doi.org/10.3390/nano14201667
APA Style
Kim, S.-M., Jun, J. H., Lee, J., Taqi, M., Shin, H., Lee, S., Lee, H., Yoo, W. J., & Lee, B. H.
(2024). Demonstration of Steep Switching Behavior Based on Band Modulation in WSe2 Feedback Field-Effect Transistor. Nanomaterials, 14(20), 1667.
https://doi.org/10.3390/nano14201667
