Article Versions Notes

Panasci SE, Deretzis I, Schilirò E, La Magna A, Roccaforte F, Koos A, Nemeth M, Pécz B, Cannas M, Agnello S, et al. Interface Properties of MoS₂ van der Waals Heterojunctions with GaN. Nanomaterials. 2024; 14(2):133. https://doi.org/10.3390/nano14020133

Panasci, Salvatore Ethan, Ioannis Deretzis, Emanuela Schilirò, Antonino La Magna, Fabrizio Roccaforte, Antal Koos, Miklos Nemeth, Béla Pécz, Marco Cannas, Simonpietro Agnello, and et al. 2024. "Interface Properties of MoS₂ van der Waals Heterojunctions with GaN" Nanomaterials 14, no. 2: 133. https://doi.org/10.3390/nano14020133

Panasci, S. E., Deretzis, I., Schilirò, E., La Magna, A., Roccaforte, F., Koos, A., Nemeth, M., Pécz, B., Cannas, M., Agnello, S., & Giannazzo, F. (2024). Interface Properties of MoS₂ van der Waals Heterojunctions with GaN. Nanomaterials, 14(2), 133. https://doi.org/10.3390/nano14020133