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Journal: Nanomaterials, 2024
Volume: 14
Number: 59
Article:
Interface Trap Effect on the n-Channel GaN Schottky Barrier-Metal–Oxide Semiconductor Field-Effect Transistor for Ultraviolet Optoelectronic Integration
Authors:
by
Byeong-Jun Park, Han-Sol Kim and Sung-Ho Hahm
Link:
https://www.mdpi.com/2079-4991/14/1/59
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