Order Article Reprints

Sun X, Wang D, Qian L, Liu T, Yang J, Chen K, Wang L, Huang Z, Xu M, Wang C, et al. A Novel Si Nanosheet Channel Release Process for the Fabrication of Gate-All-Around Transistors and Its Mechanism Investigation. Nanomaterials. 2023; 13(3):504. https://doi.org/10.3390/nano13030504

Sun, Xin, Dawei Wang, Lewen Qian, Tao Liu, Jingwen Yang, Kun Chen, Luyu Wang, Ziqiang Huang, Min Xu, Chen Wang, and et al. 2023. "A Novel Si Nanosheet Channel Release Process for the Fabrication of Gate-All-Around Transistors and Its Mechanism Investigation" Nanomaterials 13, no. 3: 504. https://doi.org/10.3390/nano13030504

Sun, X., Wang, D., Qian, L., Liu, T., Yang, J., Chen, K., Wang, L., Huang, Z., Xu, M., Wang, C., Wu, C., Xu, S., & Zhang, D. W. (2023). A Novel Si Nanosheet Channel Release Process for the Fabrication of Gate-All-Around Transistors and Its Mechanism Investigation. Nanomaterials, 13(3), 504. https://doi.org/10.3390/nano13030504