Next Article in Journal
Barrier Height, Ideality Factor and Role of Inhomogeneities at the AlGaN/GaN Interface in GaN Nanowire Wrap-Gate Transistor
Previous Article in Journal
A Design of High-Efficiency: Vertical Accumulation Modulators Based on Silicon Photonics
 
 
Communication

Article Versions Notes

Nanomaterials 2023, 13(24), 3158; https://doi.org/10.3390/nano13243158
Action Date Notes Link
article xml file uploaded 17 December 2023 07:29 CET Original file -
article xml uploaded. 17 December 2023 07:29 CET Update https://www.mdpi.com/2079-4991/13/24/3158/xml
article pdf uploaded. 17 December 2023 07:29 CET Version of Record https://www.mdpi.com/2079-4991/13/24/3158/pdf
article supplementary file uploaded. 17 December 2023 07:29 CET - https://www.mdpi.com/2079-4991/13/24/3158#supplementary
article html file updated 17 December 2023 07:31 CET Original file https://www.mdpi.com/2079-4991/13/24/3158/html
Back to TopTop