Shamakhov, V.; Slipchenko, S.; Nikolaev, D.; Smirnov, A.; Eliseyev, I.; Grishin, A.; Kondratov, M.; Shashkin, I.; Pikhtin, N.
Selective Area Epitaxy of Highly Strained InGaAs Quantum Wells (980–990 nm) in Ultrawide Windows Using Metalorganic Chemical Vapor Deposition. Nanomaterials 2023, 13, 2386.
https://doi.org/10.3390/nano13172386
AMA Style
Shamakhov V, Slipchenko S, Nikolaev D, Smirnov A, Eliseyev I, Grishin A, Kondratov M, Shashkin I, Pikhtin N.
Selective Area Epitaxy of Highly Strained InGaAs Quantum Wells (980–990 nm) in Ultrawide Windows Using Metalorganic Chemical Vapor Deposition. Nanomaterials. 2023; 13(17):2386.
https://doi.org/10.3390/nano13172386
Chicago/Turabian Style
Shamakhov, Viktor, Sergey Slipchenko, Dmitriy Nikolaev, Alexander Smirnov, Ilya Eliseyev, Artyom Grishin, Matvei Kondratov, Ilya Shashkin, and Nikita Pikhtin.
2023. "Selective Area Epitaxy of Highly Strained InGaAs Quantum Wells (980–990 nm) in Ultrawide Windows Using Metalorganic Chemical Vapor Deposition" Nanomaterials 13, no. 17: 2386.
https://doi.org/10.3390/nano13172386
APA Style
Shamakhov, V., Slipchenko, S., Nikolaev, D., Smirnov, A., Eliseyev, I., Grishin, A., Kondratov, M., Shashkin, I., & Pikhtin, N.
(2023). Selective Area Epitaxy of Highly Strained InGaAs Quantum Wells (980–990 nm) in Ultrawide Windows Using Metalorganic Chemical Vapor Deposition. Nanomaterials, 13(17), 2386.
https://doi.org/10.3390/nano13172386
