Simha, C.; Herrero-Saboya, G.; Giacomazzi, L.; Martin-Samos, L.; Hemeryck, A.; Richard, N.
Deep Levels and Electron Paramagnetic Resonance Parameters of Substitutional Nitrogen in Silicon from First Principles. Nanomaterials 2023, 13, 2123.
https://doi.org/10.3390/nano13142123
AMA Style
Simha C, Herrero-Saboya G, Giacomazzi L, Martin-Samos L, Hemeryck A, Richard N.
Deep Levels and Electron Paramagnetic Resonance Parameters of Substitutional Nitrogen in Silicon from First Principles. Nanomaterials. 2023; 13(14):2123.
https://doi.org/10.3390/nano13142123
Chicago/Turabian Style
Simha, Chloé, Gabriela Herrero-Saboya, Luigi Giacomazzi, Layla Martin-Samos, Anne Hemeryck, and Nicolas Richard.
2023. "Deep Levels and Electron Paramagnetic Resonance Parameters of Substitutional Nitrogen in Silicon from First Principles" Nanomaterials 13, no. 14: 2123.
https://doi.org/10.3390/nano13142123
APA Style
Simha, C., Herrero-Saboya, G., Giacomazzi, L., Martin-Samos, L., Hemeryck, A., & Richard, N.
(2023). Deep Levels and Electron Paramagnetic Resonance Parameters of Substitutional Nitrogen in Silicon from First Principles. Nanomaterials, 13(14), 2123.
https://doi.org/10.3390/nano13142123