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Journal: NanomaterialsVolume: 12Number: 889
Article: 4-Levels Vertically Stacked SiGe Channel Nanowires Gate-All-Around Transistor with Novel Channel Releasing and Source and Drain Silicide Process
  • Authors:
  • Xiaohong Cheng,
  • Yongliang Li* and
  • Fei Zhao
  • et al.
Link: https://www.mdpi.com/2079-4991/12/5/889

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