Order Article Reprints

Yao Q, Ma X, Wang H, Wang Y, Wang G, Zhang J, Liu W, Wang X, Yan J, Li Y, et al. Investigate on the Mechanism of HfO₂/Si_0.7Ge_0.3 Interface Passivation Based on Low-Temperature Ozone Oxidation and Si-Cap Methods. Nanomaterials. 2021; 11(4):955. https://doi.org/10.3390/nano11040955

Yao, Qide, Xueli Ma, Hanxiang Wang, Yanrong Wang, Guilei Wang, Jing Zhang, Wenkai Liu, Xiaolei Wang, Jiang Yan, Yongliang Li, and et al. 2021. "Investigate on the Mechanism of HfO₂/Si_0.7Ge_0.3 Interface Passivation Based on Low-Temperature Ozone Oxidation and Si-Cap Methods" Nanomaterials 11, no. 4: 955. https://doi.org/10.3390/nano11040955

Yao, Q., Ma, X., Wang, H., Wang, Y., Wang, G., Zhang, J., Liu, W., Wang, X., Yan, J., Li, Y., & Wang, W. (2021). Investigate on the Mechanism of HfO₂/Si_0.7Ge_0.3 Interface Passivation Based on Low-Temperature Ozone Oxidation and Si-Cap Methods. Nanomaterials, 11(4), 955. https://doi.org/10.3390/nano11040955