Austin, A.J.; Echeverria, E.; Wagle, P.; Mainali, P.; Meyers, D.; Gupta, A.K.; Sachan, R.; Prassana, S.; McIlroy, D.N.
High-Temperature Atomic Layer Deposition of GaN on 1D Nanostructures. Nanomaterials 2020, 10, 2434.
https://doi.org/10.3390/nano10122434
AMA Style
Austin AJ, Echeverria E, Wagle P, Mainali P, Meyers D, Gupta AK, Sachan R, Prassana S, McIlroy DN.
High-Temperature Atomic Layer Deposition of GaN on 1D Nanostructures. Nanomaterials. 2020; 10(12):2434.
https://doi.org/10.3390/nano10122434
Chicago/Turabian Style
Austin, Aaron J., Elena Echeverria, Phadindra Wagle, Punya Mainali, Derek Meyers, Ashish Kumar Gupta, Ritesh Sachan, S. Prassana, and David N. McIlroy.
2020. "High-Temperature Atomic Layer Deposition of GaN on 1D Nanostructures" Nanomaterials 10, no. 12: 2434.
https://doi.org/10.3390/nano10122434
APA Style
Austin, A. J., Echeverria, E., Wagle, P., Mainali, P., Meyers, D., Gupta, A. K., Sachan, R., Prassana, S., & McIlroy, D. N.
(2020). High-Temperature Atomic Layer Deposition of GaN on 1D Nanostructures. Nanomaterials, 10(12), 2434.
https://doi.org/10.3390/nano10122434