Article Versions Notes

Chang S-J, Kim D-S, Kim T-W, Lee J-H, Bae Y, Jung H-W, Kang SC, Kim H, Noh Y-S, Lee S-H, et al. Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer. Nanomaterials. 2020; 10(11):2175. https://doi.org/10.3390/nano10112175

Chang, Sung-Jae, Dong-Seok Kim, Tae-Woo Kim, Jung-Hee Lee, Youngho Bae, Hyun-Wook Jung, Soo Cheol Kang, Haecheon Kim, Youn-Sub Noh, Sang-Heung Lee, and et al. 2020. "Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer" Nanomaterials 10, no. 11: 2175. https://doi.org/10.3390/nano10112175

Chang, S.-J., Kim, D.-S., Kim, T.-W., Lee, J.-H., Bae, Y., Jung, H.-W., Kang, S. C., Kim, H., Noh, Y.-S., Lee, S.-H., Kim, S.-I., Ahn, H.-K., & Lim, J.-W. (2020). Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer. Nanomaterials, 10(11), 2175. https://doi.org/10.3390/nano10112175