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Journal: Nanomaterials, 2020
Volume: 10
Number: 2159

Article: Self-Rectifying Resistive Switching and Short-Term Memory Characteristics in Pt/HfO2/TaOx/TiN Artificial Synaptic Device
Authors: by Hojeong Ryu and Sungjun Kim
Link: https://www.mdpi.com/2079-4991/10/11/2159

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