Kang, S.C.; Jung, H.-W.; Chang, S.-J.; Kim, S.M.; Lee, S.K.; Lee, B.H.; Kim, H.; Noh, Y.-S.; Lee, S.-H.; Kim, S.-I.;
et al. Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors. Nanomaterials 2020, 10, 2116.
https://doi.org/10.3390/nano10112116
AMA Style
Kang SC, Jung H-W, Chang S-J, Kim SM, Lee SK, Lee BH, Kim H, Noh Y-S, Lee S-H, Kim S-I,
et al. Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors. Nanomaterials. 2020; 10(11):2116.
https://doi.org/10.3390/nano10112116
Chicago/Turabian Style
Kang, Soo Cheol, Hyun-Wook Jung, Sung-Jae Chang, Seung Mo Kim, Sang Kyung Lee, Byoung Hun Lee, Haecheon Kim, Youn-Sub Noh, Sang-Heung Lee, Seong-Il Kim,
and et al. 2020. "Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors" Nanomaterials 10, no. 11: 2116.
https://doi.org/10.3390/nano10112116
APA Style
Kang, S. C., Jung, H.-W., Chang, S.-J., Kim, S. M., Lee, S. K., Lee, B. H., Kim, H., Noh, Y.-S., Lee, S.-H., Kim, S.-I., Ahn, H.-K., & Lim, J.-W.
(2020). Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors. Nanomaterials, 10(11), 2116.
https://doi.org/10.3390/nano10112116
