Article Versions Notes

Hwang I-T, Jang K-W, Kim H-J, Lee S-H, Lim J-W, Yang J-M, Kwon H-S, Kim H-S. Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect. Applied Sciences. 2019; 9(17):3610. https://doi.org/10.3390/app9173610

Hwang, In-Tae, Kyu-Won Jang, Hyun-Jung Kim, Sang-Heung Lee, Jong-Won Lim, Jin-Mo Yang, Ho-Sang Kwon, and Hyun-Seok Kim. 2019. "Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect" Applied Sciences 9, no. 17: 3610. https://doi.org/10.3390/app9173610

Hwang, I.-T., Jang, K.-W., Kim, H.-J., Lee, S.-H., Lim, J.-W., Yang, J.-M., Kwon, H.-S., & Kim, H.-S. (2019). Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect. Applied Sciences, 9(17), 3610. https://doi.org/10.3390/app9173610