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EUV-Induced Plasma: A Peculiar Phenomenon of a Modern Lithographic Technology

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Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600MB Eindhoven, The Netherlands
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ASML The Netherlands B.V., P.O. Box 324, 5500AH Veldhoven, The Netherlands
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Institute for Spectroscopy of the Russian Academy of Sciences, Fizicheskaya str. 5, Troitsk, Moscow 108840, Russia
*
Author to whom correspondence should be addressed.
ISTEQ B.V., High Tech Campus 9, 5656 AE Eindhoven, The Netherlands.
Appl. Sci. 2019, 9(14), 2827; https://doi.org/10.3390/app9142827
Received: 11 June 2019 / Revised: 3 July 2019 / Accepted: 10 July 2019 / Published: 15 July 2019
(This article belongs to the Special Issue Advanced EUV and X-Ray Optics)
After a long period of relatively low interest, science related to effects in the Extreme Ultraviolet (EUV) spectrum range experienced an explosive boom of publications in the last decades. A new application of EUV in lithography was the reason for such a growth. Naturally, an intensive development in such area produces a snowball effect of relatively uncharted phenomena. EUV-induced plasma is one of those. While being produced in the volume of a rarefied gas, it has a direct impact onto optical surfaces and construction materials of lithography machines, and thus has not only scientific peculiarity, but it is also of major interest for the technological application. The current article provides an overview of the existing knowledge regarding EUV-induced plasma characteristics. It describes common, as well as distinguishing, features of it in comparison with other plasmas and discusses its interaction with solid materials. This article will also identify the gaps in the existing knowledge and it will propose ways to bridge them. View Full-Text
Keywords: Extreme Ultraviolet; lithography; EUV; EUV-induced plasma; photon-induced plasma; MCRS; Electron density; Ion energy distribution function; IEDF; EUVL Extreme Ultraviolet; lithography; EUV; EUV-induced plasma; photon-induced plasma; MCRS; Electron density; Ion energy distribution function; IEDF; EUVL
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MDPI and ACS Style

Beckers, J.; van de Ven, T.; van der Horst, R.; Astakhov, D.; Banine, V. EUV-Induced Plasma: A Peculiar Phenomenon of a Modern Lithographic Technology. Appl. Sci. 2019, 9, 2827.

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