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Borisenko DP, Gusev AS, Kargin NI, Dobrokhotov PL, Timofeev AA, Labunov VA, Mikhalik MM, Katin KP, Maslov MM, Dzhumaev PS, et al. Few-Layer Graphene as an Efficient Buffer for GaN/AlN Epitaxy on a SiO2/Si Substrate: A Joint Experimental and Theoret-ical Study. Applied Sciences. 2022; 12(22):11516. https://doi.org/10.3390/app122211516

Borisenko, Denis Petrovich, Alexander Sergeevich Gusev, Nikolay Ivanovich Kargin, Petr Leonidovich Dobrokhotov, Alexey Afanasievich Timofeev, Vladimir Arkhipovich Labunov, Mikhail Mikhailovich Mikhalik, Konstantin Petrovich Katin, Mikhail Mikhailovich Maslov, Pavel Sergeevich Dzhumaev, and et al. 2022. "Few-Layer Graphene as an Efficient Buffer for GaN/AlN Epitaxy on a SiO2/Si Substrate: A Joint Experimental and Theoret-ical Study" Applied Sciences 12, no. 22: 11516. https://doi.org/10.3390/app122211516

Borisenko, D. P., Gusev, A. S., Kargin, N. I., Dobrokhotov, P. L., Timofeev, A. A., Labunov, V. A., Mikhalik, M. M., Katin, K. P., Maslov, M. M., Dzhumaev, P. S., & Komissarov, I. V. (2022). Few-Layer Graphene as an Efficient Buffer for GaN/AlN Epitaxy on a SiO2/Si Substrate: A Joint Experimental and Theoret-ical Study. Applied Sciences, 12(22), 11516. https://doi.org/10.3390/app122211516