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Journal: Applied SciencesVolume: 12Number: 11516
Article: Few-Layer Graphene as an Efficient Buffer for GaN/AlN Epitaxy on a SiO2/Si Substrate: A Joint Experimental and Theoret-ical Study
  • Authors:
  • Denis Petrovich Borisenko1,*,
  • Alexander Sergeevich Gusev1,* and
  • Nikolay Ivanovich Kargin1
  • et al.
Link: https://www.mdpi.com/2076-3417/12/22/11516

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