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Journal: Applied SciencesVolume: 10Number: 8880
Article: Investigation on the Hump Behavior of Gate-Normal Nanowire Tunnel Field-Effect Transistors (NWTFETs)
  • Authors:
  • Min Woo Kang and
  • Woo Young Choi*
Link: https://www.mdpi.com/2076-3417/10/24/8880

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