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Journal: Appl. Sci., 2020
Volume: 10
Number: 8880

Article: Investigation on the Hump Behavior of Gate-Normal Nanowire Tunnel Field-Effect Transistors (NWTFETs)
Authors: by Min Woo Kang and Woo Young Choi
Link: https://www.mdpi.com/2076-3417/10/24/8880

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