Blanchard, P.; Brubaker, M.; Harvey, T.; Roshko, A.; Sanford, N.; Weber, J.; Bertness, K.A.
Characterization of Sub-Monolayer Contaminants at the Regrowth Interface in GaN Nanowires Grown by Selective-Area Molecular Beam Epitaxy. Crystals 2018, 8, 178.
https://doi.org/10.3390/cryst8040178
AMA Style
Blanchard P, Brubaker M, Harvey T, Roshko A, Sanford N, Weber J, Bertness KA.
Characterization of Sub-Monolayer Contaminants at the Regrowth Interface in GaN Nanowires Grown by Selective-Area Molecular Beam Epitaxy. Crystals. 2018; 8(4):178.
https://doi.org/10.3390/cryst8040178
Chicago/Turabian Style
Blanchard, Paul, Matt Brubaker, Todd Harvey, Alexana Roshko, Norman Sanford, Joel Weber, and Kris A. Bertness.
2018. "Characterization of Sub-Monolayer Contaminants at the Regrowth Interface in GaN Nanowires Grown by Selective-Area Molecular Beam Epitaxy" Crystals 8, no. 4: 178.
https://doi.org/10.3390/cryst8040178
APA Style
Blanchard, P., Brubaker, M., Harvey, T., Roshko, A., Sanford, N., Weber, J., & Bertness, K. A.
(2018). Characterization of Sub-Monolayer Contaminants at the Regrowth Interface in GaN Nanowires Grown by Selective-Area Molecular Beam Epitaxy. Crystals, 8(4), 178.
https://doi.org/10.3390/cryst8040178