Sakai, M.; Hanada, M.; Kuniyoshi, S.; Yamauchi, H.; Nakamura, M.; Kudo, K.
Gate-Induced Thermally Stimulated Current on the Ferroelectric-like Dielectric Properties of (BEDT-TTF)(TCNQ) Crystalline Field Effect Transistor. Crystals 2012, 2, 730-740.
https://doi.org/10.3390/cryst2030730
AMA Style
Sakai M, Hanada M, Kuniyoshi S, Yamauchi H, Nakamura M, Kudo K.
Gate-Induced Thermally Stimulated Current on the Ferroelectric-like Dielectric Properties of (BEDT-TTF)(TCNQ) Crystalline Field Effect Transistor. Crystals. 2012; 2(3):730-740.
https://doi.org/10.3390/cryst2030730
Chicago/Turabian Style
Sakai, Masatoshi, Mitsutoshi Hanada, Shigekazu Kuniyoshi, Hiroshi Yamauchi, Masakazu Nakamura, and Kazuhiro Kudo.
2012. "Gate-Induced Thermally Stimulated Current on the Ferroelectric-like Dielectric Properties of (BEDT-TTF)(TCNQ) Crystalline Field Effect Transistor" Crystals 2, no. 3: 730-740.
https://doi.org/10.3390/cryst2030730
APA Style
Sakai, M., Hanada, M., Kuniyoshi, S., Yamauchi, H., Nakamura, M., & Kudo, K.
(2012). Gate-Induced Thermally Stimulated Current on the Ferroelectric-like Dielectric Properties of (BEDT-TTF)(TCNQ) Crystalline Field Effect Transistor. Crystals, 2(3), 730-740.
https://doi.org/10.3390/cryst2030730