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Journal: Crystals, 2024
Volume: 14
Number: 414
414
Article: The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
Authors: by Emmanuel Wangila, Calbi Gunder, Petro M. Lytvyn, Mohammad Zamani-Alavijeh, Fernando Maia de Oliveira, Serhii Kryvyi, Hryhorii Stanchu, Aida Sheibani, Yuriy I. Mazur, Shui-Qing Yu and Gregory Salamo
Link: https://www.mdpi.com/2073-4352/14/5/414

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