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Journal: CrystalsVolume: 14Number: 253
Article: High-Performance N-Polar GaN/AlGaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors with Low Surface Roughness Enabled by Chemical–Mechanical-Polishing-Incorporated Layer Transfer Technology
- Authors:
- Bohan Guo1,2,3,
- Guohao Yu1,3,* and
- Li Zhang3
- et al.
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