Kobayashi, K.; Okuyama, R.; Kadono, T.; Onaka-Masada, A.; Hirose, R.; Suzuki, A.; Koga, Y.; Sueoka, K.; Kurita, K.
TEM Image Analysis and Simulation Physics for Two-Step Recrystallization of Discretely Amorphized C3H5-Molecular-Ion-Implanted Silicon Substrate Surface. Crystals 2024, 14, 112.
https://doi.org/10.3390/cryst14020112
AMA Style
Kobayashi K, Okuyama R, Kadono T, Onaka-Masada A, Hirose R, Suzuki A, Koga Y, Sueoka K, Kurita K.
TEM Image Analysis and Simulation Physics for Two-Step Recrystallization of Discretely Amorphized C3H5-Molecular-Ion-Implanted Silicon Substrate Surface. Crystals. 2024; 14(2):112.
https://doi.org/10.3390/cryst14020112
Chicago/Turabian Style
Kobayashi, Koji, Ryosuke Okuyama, Takeshi Kadono, Ayumi Onaka-Masada, Ryo Hirose, Akihiro Suzuki, Yoshihiro Koga, Koji Sueoka, and Kazunari Kurita.
2024. "TEM Image Analysis and Simulation Physics for Two-Step Recrystallization of Discretely Amorphized C3H5-Molecular-Ion-Implanted Silicon Substrate Surface" Crystals 14, no. 2: 112.
https://doi.org/10.3390/cryst14020112
APA Style
Kobayashi, K., Okuyama, R., Kadono, T., Onaka-Masada, A., Hirose, R., Suzuki, A., Koga, Y., Sueoka, K., & Kurita, K.
(2024). TEM Image Analysis and Simulation Physics for Two-Step Recrystallization of Discretely Amorphized C3H5-Molecular-Ion-Implanted Silicon Substrate Surface. Crystals, 14(2), 112.
https://doi.org/10.3390/cryst14020112
